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ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 july 2014 ksc5502d / ksc5502dt npn triple diffused planar silicon transistor features ? high voltage power switch switching application ? wide safe operating area ? built-in free-wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices : d-pak or to-220 ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t c = 25c unless otherwise noted. note: 1. pulse test: pulse width = 5 ms, duty cycle 10%. part number top mark package packing method ksc5502dtm c5502d to-252 3l (dpak) tape and reel KSC5502DTTU c5502d to-220 3l rail symbol parameter value unit v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp collector current (pulse) (1) 4a i b base current (dc) 1 a i bp base current (pulse) (1) 2a t j junction temperature 150 c t stg storage temperature range -65 to 150 c eas avalanche energy (t j = 25c) 2.5 mj 1 1.base 2,4.collector 3.emitter 1 d-pak to-220 c b e equivalent circuit 4 4
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 2 thermal characteristics values are at t c = 25c unless otherwise noted. electrical characteristics values are at t c = 25c unless otherwise noted. symbol parameter ksc5502d (d-pak) ksc5502dt (to-220) unit p c collector dissipation (t c = 25 c) 87.83 118.16 w r jc thermal resistance, junction to case 1.42 1.06 c/w r ja thermal resistance, junction to ambient 111.0 62.5 c/w t l maximum lead temperature for soldering purpose: 1/8 inch from case for 5 seconds 270 c symbol parameter conditions min. typ. max. unit bv cbo collector-base breakdown voltage i c = 1 ma, i e = 0 1200 1350 v bv ceo collector-emitter breakdown voltage i c = 5 ma, i b = 0 600 750 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 12.0 13.7 v i ces collector cut-off current v ces = 1200 v, v be = 0 t c = 25 c100 a t c = 125 c500 i ceo collector cut-off current v ce = 600 v, i b = 0 t c = 25 c100 a t c = 125 c500 i ebo emitter cut-off current v eb = 12 v, i c = 0 t c = 25 c10 a h fe dc current gain v ce = 1 v, i c = 0.2 a t c = 25 c152840 t c = 125 c8 18 v ce = 1 v, i c = 1 a t c = 25 c4.0 6.4 t c = 125 c3.0 4.7 v ce = 2.5 v, i c = 0.5 a t c = 25 c122030 t c = 125 c6 12 v ce (sat) collector-emitter saturation voltage i c = 0.2 a, i b = 0.02 a t c = 25 c 0.31 0.80 v t c = 125 c 0.54 1.10 i c = 0.4 a, i b = 0.08 a t c = 25 c 0.15 0.60 t c = 125 c 0.23 1.00 i c = 1 a, i b = 0.2 a t c = 25 c 0.40 1.50 t c = 125 c 1.30 3.00 v be (sat) base-emitter saturation voltage i c = 0.4 a, i b = 0.08 a t c = 25 c 0.77 1.00 v t c = 125 c 0.60 0.90 i c = 1 a, i b = 0.2 a t c = 25 c 0.83 1.20 t c = 125 c 0.70 1.00 c ib input capacitance v eb = 8 v, i c = 0, f = 1 mhz 385 500 pf c ob output capacitance v cb = 10 v, i e = 0, f = 1 mhz 60 100 pf f t current gain bandwidth product i c = 0.5 a,v ce = 10 v 11 mhz v f diode forward voltage i f = 0.2 a t c = 25 c 0.75 1.20 v t c = 125 c0.59 i f = 0.4 a t c = 25 c 0.80 1.30 t c = 125 c0.64 i f = 1 a t c = 25 c 0.90 1.50
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 3 electrical characteristics values are at t c = 25c unless otherwise noted. symbol parameter conditions min typ. max. unit t fr diode froward recovery time (di/dt=10 a/ s) i f = 0.2 a 650 ns i f = 0.4 a 740 i f = 1 a 785 v ce (dsat) dynamic saturation voltage i c = 0.4 a, i b1 = 80 ma, v cc = 300 v at 1 s7.2 v at 3 s1.8 i c = 1 a, i b1 = 200 ma, v cc = 300 v at 1 s18.0 at 3 s6.0 resistive load switching (d.c < 10%, pulse width = 20 s) t on turn-on time i c = 0.4 a, i b1 = 80 ma, i b2 = 0.2 a, v cc = 300 v, r l = 750 t c = 25 c175350 ns t c = 125 c185 t off turn-off time t c = 25 c2.13.0 s t c = 125 c2.6 t on turn-on time i c = 1 a, i b1 = 160 ma, i b2 = 160 ma, v cc = 300 v, r l = 300 t c = 25 c240450 ns t c = 125 c310 t off turn-off time t c = 25 c3.75.0 s t c = 125 c4.5 inductive load switching (v cc = 15 v) t stg storage time i c = 0.4 a, i b1 = 80 ma, i b2 = 0.2 a, v z = 300 v, l c = 200 h t c = 25 c1.22.0 s t c = 125 c1.5 t f fall time t c = 25 c90200 ns t c = 125 c65 t c cross-over time t c = 25 c185350 ns t c = 125 c145 t stg storage time i c = 0.8 a, i b1 = 160 ma, i b2 = 160 ma, v cc = 300 v, l c = 200 h t c = 25 c 3.30 4.50 s t c = 125 c3.75 t f fall time t c = 25 c90250 ns t c = 125 c160 t c cross-over time t c = 25 c300600 ns t c = 125 c570
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 4 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. typical collector saturation voltage figure 6. base-emitter saturation voltage 01234567 0 1 2 3 1a 900ma 800ma 700ma 600ma 500ma 400ma 300ma i b =100ma 200ma i c [a], collector current v ce [v], collector emitter voltage 1m 10m 100m 1 1 10 100 v ce =1v t j =25 o c t j =125 o c h fe , dc current gain i c [a], collector current) 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 o c t j =125 o c v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 o c t j =125 o c v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0 1 2 t j =25 o c 2.0a 1.5a 1.0a 0.4a i c =0.2a v ce [v], voltage i b [a], base current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 o c t j =125 o c v be [v], voltage i c [a], collector current
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 5 typical performance characteristics (continued) figure 7. base-emitter saturation voltage figure 8. diode forward voltage figure 9. collector output capacitance figure 10. resistive switching time, t on figure 11. resistive switching time, t off figure 12. resistive switching time, t on 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 o c t j =125 o c v be [v], voltage i c [a], collector current 1m 10m 100m 1 0.1 1 10 t j =25 o c t j =125 o c v fd [v], voltage i fd [a], forward current 110100 10 100 1000 f=1mhz c ob c ib capacitance[pf] reverse voltage[v] 0.5 1 1.5 2 2.5 3 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 t j =25 o c i c =5i b1 =2i b2 v cc =300v pw=20 s t j =125 o c t on [ns],time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =2i b2 v cc =300v pw=20 s t j =25 o c t j =125 o c t on ( s),time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v c =300v pw=20 s t j =25 o c t j =125 o c t on (ns),time i c [a], collector current 0.3
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 6 typical performance characteristics (continued) figure 13. resistive switching time, t off figure 14. inductive switching time, t stg figure 15. inductive switching time, t f figure 16. inductive switching time, t c figure 17. inductive switching time, t stg figure 18. inductive switching time, t f 0.5 1 1.5 2 2.5 3 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 i c =5i b1 =5i b2 v c =300v pw =20 s t j =25 o c t j =125 o c t on ( s),time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t stg ( s),time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 40 50 60 70 80 90 100 110 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t f (ns),time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 100 150 200 250 300 350 400 450 500 550 600 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t c [ns],time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t stg [ s],time i c [a], collector current 0.3 0.5 1 1.5 2 2.5 3 50 60 70 80 90 100 200 300 400 500 600 700 800 900 1000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t f [ns],time i c [a], collector current 0.3
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 7 typical performance characteristics (continued) figure 19. inductive switching time, t c figure 20. inductive switching time, t stg figure 21. inductive switching time, t f figure 22. inductive switching time, t c figure 23. forward bias safe operating area figure 24. power derating 0.5 1 1.5 2 2.5 3 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t j =25 o c t j =125 o c t stg [ns],time i c [a], collector current 0.3 4567891011121314 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c =2i b2 v cc =15v v z =300v l c =200 h i c =0.4a i c =0.8a t j =25 o c t j =125 o c t stg , time[ s] h fe , forced gain 4567891011121314 40 60 80 t j =125 o c i c =2i b2 v cc =15v v z =300v l c =200 h i c =0.4a i c =0.8a t j =25 o c t f , time[ns] h fe , forced gain 4567891011121314 80 120 160 200 i c =2i b2 v cc =15v v z =300v l c =200 h i c =0.4a i c =0.8a t j =25 o c t j =125 o c t c , time[ns] h fe , forced gain 10 100 1000 0.01 0.1 1 10 t c =25 o c 50 s 1ms 5ms dc i c [a], collector current v ce [a], collector emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 d-pak p c [w], power dissipation t c ( o c), case temperature to-220
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 8 typical performance characteristics (continued) figure 25. zojc, transient thermal impedance (d-pak) figure 26. zoja, transient thermal impedance (d-pak) figure 27. zojc, transient thermal impedance (to-220) figure 28. zoja, transient thermal impedance (to-220) 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 10 0.01 0.02 0.05 0.1 0.5 0.2 normalized thermal impedance zojc t, rectangular pulse duration single 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.02 0.05 0.1 0.5 0.2 normalized thermal impedance zoja t, rectangular pulse duration single 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 10 0.01 0.02 0.05 0.1 0.5 0.2 normalized thermal impedance zojc t, rectangular pulse duration single 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.02 0.05 0.1 0.5 0.2 normalized thermal impedance zoja t, rectangular pulse duration single
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 9 physical dimensions figure 29. to-252 (d-pak), molded, 3-lead, option aa & ab package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to252a03.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to252a03.pdf .
ksc5502d / ksc5502dt ? npn triple diffused planar silicon transistor ? 2000 fairchild semiconductor corporation www.fairchildsemi.com ksc5502d / ksc5502dt rev. 1.1.0 10 physical dimensions figure 30. to-220, molded, 3lead, jedec variation ab package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to220b03.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to220b03.pdf .
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